mga-412p8 gaas enhancement-mode phemt power amplifier optimized for ieee 802.11b/g applications data sheet description avago technologiess mga-412p8 linear power amplifier is designed for applications in the (1.7-3) ghz frequency range. the amplifier is optimized for ieee 802.11b/g wlan applications and has a best-in- class efficiency (pae) of 25.5% (54mbps ofdm) achieved through the use of avago technologies proprietary gaas enhancement-mode phemt process. the mga-412p8 is housed in a miniature 2.0 x 2.0 x 0.75mm 3 8-lead leadless-plastic-chip-carrier (lpcc) package. the compact footprint, low profile and excellent thermal efficiency of the lpcc package makes the mga-412p8 an ideal choice as a power amplifier for mobile ieee 802.11b/g wlan applications. it achieves +19.0 dbm linear output power that meets 3% evm at 54mbps data rate (ofdm modulation), and 23dbm at 11mbps (ccck modulation). component image features ? advanced gaas e-phemt ? integrated power detector & power down functions ? high efficiency ? single +3.3v supply ? small footprint: 2x2mm 2 ? low profile: 0.8mm max. specifications ? at 2.452 ghz; 3.3v (typ.) : ? gain: 25.5 db ? p1db: 25.3 dbm ? pout linear with ieee 802.11g ofdm modulation @54mbps data rate: 19.0 dbm @ 3% evm. ? current @19dbm linear pout: (54mbps) : 95ma ? reverse isolation (typ): > 40db ? quiescent current (typ): 40ma ? meets ieee 802.11b @11mbps (ccck modulation) with pout: 23dbm while consuming 200ma. applications ? power amplifier for ieee 802.11b/g wlan applications ? bluetooth power amplifier ? 2.4ghz ism band applications 2.0 x 2.0 x 0.75 mm 8-lead lpcc pin 8 bottom view top view note: package marking provides orientation and identification "1c" = product code "x" = date code indicates month of manufacture 1cx pin 7 pin 6 pin 5 pin 1 pin 2 pin 3 pin 4 1:gnd 2:rfin 2:gnd 4:vdd1 8:det 7:rfout 6:vdd2 5:pwr down attention attention attention attention attention : observe precautions for handling electrostatic sensitive devices. esd machine model = 50 v esd human body model = 200 v refer to avago technologies application note a004r: electrostatic discharge, damage and control .
2 usl 30 35 40 50 55 45 lsl 24 24.2 24.6 25 25.2 25.6 26 lsl 23 24 25 26 27 28 thermal resistance [2] (vdd = 3.3v), jc = 33.3 c/w notes: 1. operation of this device in excess of any of these limits may cause permanent damage. 2. thermal resistance measured using 150 c liquid crystal measurement technique. 3. board (package belly) temperature, tb is 25 c. derate 30mw/ c for tb>123.36 c. absolute maximum rating [1] tc=25c product consistency distribution charts [4,5] figure 1. id@ 2.452ghz; nominal = 40ma, usl: 55ma figure 2. p1db @ 2.452ghz; nominal = 25.3dbm, lsl: 24db figure 3. gain@ 2.452ghz; nominal = 25.5db, lsl: 23 db symbol parameter units absolute max. v dd device voltage, rf output to ground v5 p in cw rf input power (vdd = 3.3v) dbm 10 p diss total power dissipation [3] w0.8 t j junction temperature o c150 t stg storage temperature o c -65 to 150 notes: 4. distribution data sample size is 500 samples taken from 3 different wafers and 3 different lots. future wafers allocated to this product may have nominal values anywhere between the upper and lower limits. 5. measurements are made on production test board, which represents a trade-off between optimal gain and p1db. circuit losses have been de-embedded from actual measurements.
3 symbol parameter units min typ max idq quiescent current ma 40 55 isd current drawn by shutdown pin ma 0.5 i_leak total current consumption at shutdown(vsd=0v) ua 5 g gain db 23 25.5 psat saturated power dbm 27 p1db 1 db compression point dbm 24 25.3 gain flatness (2.4 - 2.5ghz) db 1 poutn max pout per ieee 802.11b mask (ccck modulation) dbm 23 idn current @ 23dbm 802.11b bpsk ma 200 poutl linear power @ 3% evm, 54mbps ofdm dbm 19 idl current @ 3% evm ma 95 s11 input return loss db -5.5 s22 output return loss db -11.5 s12 isolation db >40 oip3 large signal, output ip3 (2-tone at 10mhz from carrier freq) dbm 38 electrical specifications[6] tc = 25 c, 2.452 ghz [typical, measured on demo board].dc bias for rf parameters vdd =vsd=3.3v unless otherwise specified, all data are taken with ofdm 64-qam modulated signal per ieee802.11g specifications at 54mbps data rate. notes: 6. measurements taken on demo board as shown on figure 4. excess circuit losses have been de-embedded from actual measurements. standard deviation and typical data based on at least 500 parts sample size from 2 wafer lots. future wafers allocated to this product may have nominal values any where within the upper and lower spec limits.
4 demo board diagram figure 4. demo board and application circuit components vdd rev 1.1 oct 2005 input sd det output 5.6nh 5.6nh 6.8pf 0ohm 1.2pf 1.5pf 6.8pf c 2.2uf 5.6nh 1000pf 1000pf 0.1uf 18nh 22ohm 0ohm 0.56mm 0.4mm
5 schematic diagram figure 5. demo board schematic diagram tlin tl1 c c7 c=2.2 uf c c6 c=0.1 uf l l4 l=18 nh c c8 c=1000 pf c c4 c=6.8 pf c c2 c=1.5 pf c c1 c=6.8 pf l l6 r= l=5.6 nh l l5 r= l=5.6 nh r r1 r=22 ohm l l3 l=5.6 nh port p2 port p1 c c5 c=1000 pf c c3 c=1.2 pf vshutdown = +3.3v on vshutdown =0v off vdd = +3.3v nom rf input rf output 1 2 4 3 8 7 5 6 detector output * * 0.56mm wide on 10mil thick rogers ro4350 board - components l6, c2 and c3 should be located as close to the packaged device pins as possible. - components r1 and l4 are used to isolate the test board from power supply effects. - recommended pcb material is roger, ro4350. - suggested component values may vary according to layout and pcb material.
6 figure 6. output power and gain vs input power figure 7. detector vs output power figure 8. evm & current vs output power figure 9. evm vs modulated output power figure 10. total current vs modulated output power figure 11. pae vs modulated output power mga-412p8 typical performance i tc = +25 c, vdd = 3.3v input signal=cw unless stated otherwise. mga-412p8 typical performance ii tc = +25 c, vdd = 3.3v input signal=ofdm signal with 54mbps, modulation=64qam unless stated otherwise. pout and gain vs pin 0 5 10 15 20 25 30 -25 -20 -15 -10 -5 0 5 input power (dbm) pout & gain pout gain vdet vs pout 0 0.5 1 1.5 2 2.5 5 7 9 111315171921232527 output power (dbm) detector(v) vdd=3v vdd=3.3v vdd=3.6v evm & current vs modulated pout 0 1 2 3 4 5 6 7 8 9 10 11 12 5.0 6.0 7.0 8.0 9.0 10.0 11.0 12.0 13.0 14.0 15.0 16.0 17.0 18.0 19.0 20.0 21.0 22.0 23.0 24.0 modulated output power (dbm) evm (%) 0 20 40 60 80 100 120 140 160 180 current (ma) evm current evm vs modulated pout 0 1 2 3 4 5 6 7 8 9 10 11 12 5 7 9 11 13 15 17 19 21 23 25 modulated output power (dbm) evm(%) vdd=3.0v vdd=3.3v vdd=3.6v total current vs modulated output power 0 20 40 60 80 100 120 140 160 180 5 7 9 1113151719212325 modulated output power(dbm) idd(ma) vdd=3.0v vdd=3.3v vdd=3.6v pae vs modulated output power 0 10 20 30 40 50 60 5 6 7 8 9 101112131415161718192021222324 modulated output power (dbm) pae%
7 figure 12. evm vs modulated output power at different temperature figure 13. typical spectral plot conforming compliance to ieee 802.11b 11mbps ccck modulation mask at 23dbm output power figure 14. typical scattering parameter plots evm vs modulated output power 0 1 2 3 4 5 6 7 8 9 10 11 12 5 7 9 11 13 15 17 19 21 23 25 modulated output power (dbm) evm(%) 25 deg c -40 deg c 85 deg c 2.42 2.44 2.46 2.48 2.50 2.52 2.54 2.56 2.58 2.40 2.60 22.5 23.0 23.5 24.0 24.5 25.0 25.5 26.0 26.5 22.0 27.0 freq, ghz db(s(2,1)) 2.42 2.44 2.46 2.48 2.50 2.52 2.54 2.56 2.58 2.40 2.60 -10 -8 -6 -12 -4 freq, ghz db(s(1,1)) db(s(2,2)) 2 x 2lpcc (jedec dfp-n) package dimensions d e 8 7 6 5 a d1 e1 p e pin1 r l b dimensions are in millimeters dimensions min. 0.70 0 0.225 1.9 0.65 1.9 1.45 nom. 0.75 0.02 0.203 ref 0.25 2.0 0.80 2.0 1.6 0.50 bsc max. 0.80 0.05 0.275 2.1 0.95 2.1 1.75 symbol a a1 a2 b d d1 e e1 e 1 pin1 2 3 4 1cx top view end view end view bottom view a2 a a1
for product information and a complete list of distributors, please go to our web site: www.avagotech.com avago, avago technologies, and the a logo are trademarks of avago technologies, pte. in the united states and other countries. data subject to change. copyright ? 2006 avago technologies pte. all rights reserved. av01-0236en - june 2, 2006 part number ordering information part number no. of devices container MGA-412P8-TR1G 3000 7" reel mga-412p8-tr2g 10000 13" reel mga-412p8-blkg 100 antistatic bag pcb land pattern and stencil design device orientation 2.80 (110.24) 0.70 (27.56) 0.25 (9.84) 0.25 (9.84) 0.50 (19.68) 0.28 (10.83) 0.60 (23.62) 0.20 (7.87) pin 1 solder mask rf transmission line 0.80 (31.50) 0.15 (5.91) 0.55 (21.65) 1.60 (62.99) + 2.72 (107.09) 0.63 (24.80) 0.22 (8.86) 0.32 (12.79) 0.50 (19.68) 0.25 (9.74) 0.63 (24.80) stencil layout (top view) pcb land pattern (top view) 0.72 (28.35) pin 1 1.54 (60.61) user feed direction cover tape carrier tape reel 8 mm 4 mm 1cx 1cx 1cx 1cx
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